| PART |
Description |
Maker |
| HM658512AI |
4 M PSRAM (512-kword ×8-bit)(4 M PSRAM (512k×8) 4个M移动存储芯片12 KWord的8位）个M移动存储芯片（为512k字8位）
4 M PSRAM (512-kword ?8-bit)(4 M PSRAM (512k瀛??8浣?)
|
Hitachi,Ltd.
|
| HM65W8512 |
4 M PSRAM (512-kword ×8-bit)(4 M PSRAM (512k×8) 4个M移动存储芯片12 KWord的8位）个M移动存储芯片（为512k字8位）
|
Hitachi,Ltd.
|
| MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V1MV18D |
16Mb SYNCBURST?SRAM
16Mb SYNCBURST?/a> SRAM
16Mb SYNCBURSTSRAM
16Mb SYNCBURST?/a> SRAM
|
Micron Technology, Inc.
|
| Z0409MF/1AA2 Z0402MF/1AA2 Z0405MF/0AA2 Z0405MF/1AA |
TRIAC|600V V(DRM)|1A I(T)RMS|TO-202VAR
IC 2.5V SDRAM 256M (16M X 16) 7.5NS BGA-60
TRIAC|700V V(DRM)|1A I(T)RMS|TO-202VAR 可控硅| 700V的五（DRM）的| 1A条口（T）的有效值|02VAR
IC PSRAM 16MB 48-VFBGA 可控硅| 800V的五（DRM）的| 1A条口（T）的有效值|02VAR
TRIAC|800V V(DRM)|1A I(T)RMS|TO-202VAR 可控硅| 800V的五（DRM）的| 1A条口（T）的有效值|02VAR
|
Cooper Bussmann, Inc.
STMicroelectronics N.V.
|
| HYE18L512320BF-7.5 HYB18L512320BF-7.5 |
DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM
|
http://
Qimonda AG
|
| HYB18L512160BF-7.5 HYE18L512160BF-7.5 |
DRAMs for Mobile Applications 512-Mbit Mobile-RAM
|
http://
|
| IBM0316809C |
(IBM031xxxxC) 16Mb SDRAM
|
IBM Microelectronics
|
| M69KM048AA |
Burst PSRAM
|
STMicroelectronics
|
| K4S161622H-TC70 K4S161622H-TC60 K4S161622H-TC55 K4 |
16Mb H-die SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| RD38F2030 |
(RD38F2xxx) FLASH+PSRAM
|
Intel
|
| IS41C16100C |
16Mb DRAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc
|
